CARBON DELTA-DOPING IN GAAS BY METAL-ORGANIC MOLECULAR-BEAM EPITAXY

Delta-Doping of carbon into GaAs by metal-organic molecular beam epita xy (MOMBE) has been studied in detail using trimethylgallium (TMG), Ga and AS4. TMG was adsorbed in the wide range of temperatures from 20-d egrees-C to 550-degrees-C during growth interruption. It is shown that Ga deposition after TMG adsorption is effective for obtaining a high peak hole concentration. This is in contrast to the case with As evapo ration, which drastically reduces the peak carrier concentration. The dependence of peak hole concentration on the TMG adsorption temperatur e shows a specific feature. The highest peak hole concentration is 4 x 10(19) cm-3 for a TMG adsorption temperature of 20-degrees-C.