APPEARANCE OF QUASI-DIRECT OPTICAL-TRANSITION FROM SI NETWORK IN SIO2-DOPED SI FILMS

Authors
OSAKA Y TOYOMURA F KATAYAMA H KOHNO K
Citation
Y. Osaka et al., APPEARANCE OF QUASI-DIRECT OPTICAL-TRANSITION FROM SI NETWORK IN SIO2-DOPED SI FILMS, JPN J A P 2, 32(8B), 1993, pp. 120001148-120001149
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
32
Issue
8B
Year of publication
1993
Pages
120001148 - 120001149
Database
ISI
SICI code
Abstract
We report the first observation of an efficient optical absorption in the optical energy region 1.0 approximately 1.8 eV from the Si network in SiO2-doped Si films. The SiO2-doped Si films were formed using the rf magnetron sputtering technique. From electron paramagnetic resonan ce measurements, the dangling bond density of unannealed samples was e stimated to be 3 X 10(17) cm-3.