CONVERSION FROM GAAS TO GAASP BY ANNEALING A GAAS LAYER ON GAP IN GA-AS-P SOLUTION

A new liquid phase epitaxial (LPE) technique of preparing alloy layers of a desired composition lattice-mismatched with a substrate has been developed. A GaAs layer was grown on a GaP substrate through step coo ling from 800-degrees-C to 795-degrees-C, followed by contact with Ga- As-P solution at a constant temperature of 795-degrees-C. This treatme nt led to a transformation in the composition of the grown GaAs to GaA sP. Thus a GaAsP layer with the composition of 0.65 GaAs mole fraction , which was not grown directly on GaP, could be prepared on GaP substr ates.