DIELECTRIC PLANARIZATION WITH SPIN-ON GLASS-FILMS - CHARACTERIZATION AND APPLICATION

Citation
Jo. Park et al., DIELECTRIC PLANARIZATION WITH SPIN-ON GLASS-FILMS - CHARACTERIZATION AND APPLICATION, Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals, 227, 1993, pp. 339-349
Citations number
9
Categorie Soggetti
Crystallography
ISSN journal
1058725X
Volume
227
Year of publication
1993
Pages
339 - 349
Database
ISI
SICI code
1058-725X(1993)227:<339:DPWSG->2.0.ZU;2-J
Abstract
Spin-on glass (SOG) materials were prepared from the acid catalyzed hy drolysis-condensation reaction of tetraethylorthosilicate and methyltz iethoxy-silane in organic solvents. Siloxane products of different mol ecular weight, molecular weight distribution, and molecular structure were obtained by adjusting reaction conditions. Various factors such a s water content, pH, and reaction time were found to play an important role in controlling the molecular parameters of the reaction products . Properties of these materials were characterized for the spin coated SOG films on both bare and patterned wafers. Effect of the baking tem perature and/or molecular parameters were studied in terms of the refr active index, thickness, film shrinkage, stress, crack generation, etc . Control of the molecular weight and hence its distribution and the c hemical structure was found to be very important in the preparation of the SOG materials as a good planarization layer.