EPITAXIAL-GROWTH OF BI(2201) PHASE IN ATOMIC LAYER-BY-LAYER DEPOSITION BY ION-BEAM SPUTTERING METHOD

Authors
SAKAI K MIGITA S OTA H OTERA H AOKI R
Citation
K. Sakai et al., EPITAXIAL-GROWTH OF BI(2201) PHASE IN ATOMIC LAYER-BY-LAYER DEPOSITION BY ION-BEAM SPUTTERING METHOD, IEICE transactions on electronics, E76C(8), 1993, pp. 1246-1250
Citations number
NO
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEICE transactions on electronics → ACNP
ISSN journal
09168524
Volume
E76C
Issue
8
Year of publication
1993
Pages
1246 - 1250
Database
ISI
SICI code
0916-8524(1993)E76C:8<1246:EOBPIA>2.0.ZU;2-T
Abstract
Bi2Sr2CuOx (Bi(2201)) thin films have been fabricated by atomic layer- by-layer deposition using ion beam sputtering (IBS) method. During the deposition, 14 wt%-ozone/oxygen mixture gas of typical pressure of 5. 0x10(-5) Torr is supplied with ultraviolet light irradiation for oxida tion. XRD and RHEED investigations reveal that a buffer layer with com positions different from Bi(2201) is formed at the early deposition st age of less than 10 units cell and then Bi (220 1) oriented along the c-axis is grown.