EFFECT OF HOT-ELECTRONS ON THE MAGNETIC-FIELD ENHANCEMENT OF EXCITON LUMINESCENCE IN GAAS

Authors
ROSSIN VV CHRISTIANEN PCM TRAVNIKOV VV
Citation
Vv. Rossin et al., EFFECT OF HOT-ELECTRONS ON THE MAGNETIC-FIELD ENHANCEMENT OF EXCITON LUMINESCENCE IN GAAS, Solid state communications, 87(7), 1993, pp. 623-626
Citations number
15
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
87
Issue
7
Year of publication
1993
Pages
623 - 626
Database
ISI
SICI code
0038-1098(1993)87:7<623:EOHOTM>2.0.ZU;2-1
Abstract
Exciton photoluminescence in ultrapure GaAs (with total shallow impuri ty concentration N(D) approximately 10(12) cm-3) Was studied in magnet ic fields up to 20 T. The observed magnetic field enhancement of free- exciton luminescence and exciton cooling were found to depend drastica lly on the excitation energy. The experimental data give strong eviden ce to the model which is based on an increase in the energy relaxation rate of photoexcited electrons in a magnetic field and an efficient e xciton-electron interaction.