INTERSUBBAND TRANSITIONS OF CDTE CD0.94ZN0.06TE STRAINED SINGLE QUANTUM-WELLS GROWN BY HOT-WALL EPITAXY/

Several CdTe/Cd0.94Zn0.06Te strained single quantum well structures wi th CdTe well widths ranging from 15 to 240 angstrom were grown on GaAs (100) substrates by the hot-wall epitaxy method. Photoluminescence me asurements on the strained single quantum well structures showed that the sharp e1h1 excitonic transition peaks in the range 1.597-1.624 eV were shifted to higher energy with decreasing well width. The dependen ce of the e1h1 excitonic transition energies on the CdTe well widths w ere calculated by taking into account the strain effects, and these th eoretical values are in good qualitative agreement with the results fr om the photoluminescence measurements. These results indicate that the CdTe/Cd0.94Zn0.06Te strained single quantum wells have a good enough heterointerface with the necessary abruptness for the investigation of basic physics including optical properties.