PHOTOELECTRIC CHARACTERISTICS OF MATERIALS PB1-XSNX TE-LESS-THAN IN GREATER-THAN SUBJECT TO MICROWAVE AND INFRARED-EMISSION

Current/voltage (CV) characteristics of solid solutions Pb1-xSnxTe<In> (with 0.22 less-than-or-equal-to x less-than-or-equal-to 0.24 and 0.2 less-than-or-equal-to N(In) less-than-or-equal-to 1.0 atomic percent) were studied at He temperatures, in presence of background at 300 K. Also the photoconductivity of these materials was measured in conditio ns of background screening and illumination at wavelengths 100 mum and 2 mm. CV-characteristics are interpreted within a model of two-electr on capturing by Jahn-Teller centers. Photoconductivity in millimeter a nd submillimeter wavebands, having relaxation times less than 10(-5) s ec, is related with heating of electronic gas in process of electromag netic power absorption by the free carriers.