TUNABLE INSB DETECTORS UNDER UNIAXIAL AND HYDROSTATIC-PRESSURE

We report on n-InSb photoconductive detectors, which are either mounte d on different substrates (metals and synthetic materials) or embedded in a special glue. If these detectors are cooled to 4.2 K, the differ ent coefficients of expansion provide either a uniaxial or a hydrostat ic pressure. This pressure causes a shift of the resonances (for the m ounted detectors up to 5.5%, for the embedded detector 5.8% at 2.3 T) and a freeze out of electrons, which results in a decrease of the cycl otron resonance (CR) signal in comparison to the impurity cyclotron re sonance (ICR) signal for the embedded detector.