AN OPERATING REGIME BASED ON SWITCHING EFFECTS FOR PHOTODETECTORS OF PB1-XSNXTE(IN) MBE FILMS

Citation
Ba. Akimov et al., AN OPERATING REGIME BASED ON SWITCHING EFFECTS FOR PHOTODETECTORS OF PB1-XSNXTE(IN) MBE FILMS, Infrared physics, 34(4), 1993, pp. 375-378
Citations number
6
Categorie Soggetti
Optics,"Physics, Applied
Journal title
ISSN journal
00200891
Volume
34
Issue
4
Year of publication
1993
Pages
375 - 378
Database
ISI
SICI code
0020-0891(1993)34:4<375:AORBOS>2.0.ZU;2-I
Abstract
Pb1-xSnTe(In)(x = 0.20) MBE films have been prepared on BaF2 substrate s. The characteristics of resistivity relaxation under the combined ef fect of a pulsed electric field and IR illumination have been investig ated. We have shown that the films can be used as rather fast-response photodetectors operating in a regime of periodic accumulation and que nching of the signal.