Ba. Akimov et al., AN OPERATING REGIME BASED ON SWITCHING EFFECTS FOR PHOTODETECTORS OF PB1-XSNXTE(IN) MBE FILMS, Infrared physics, 34(4), 1993, pp. 375-378
Pb1-xSnTe(In)(x = 0.20) MBE films have been prepared on BaF2 substrate
s. The characteristics of resistivity relaxation under the combined ef
fect of a pulsed electric field and IR illumination have been investig
ated. We have shown that the films can be used as rather fast-response
photodetectors operating in a regime of periodic accumulation and que
nching of the signal.