PHOTOMAGNETIC EFFECT AND PHOTOCONDUCTIVITY OF THIN EPITAXIAL CDXHG1-XTE CDTE FILMS/

Citation
Sa. Studenikin et al., PHOTOMAGNETIC EFFECT AND PHOTOCONDUCTIVITY OF THIN EPITAXIAL CDXHG1-XTE CDTE FILMS/, Semiconductors, 27(5), 1993, pp. 409-415
Citations number
23
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
27
Issue
5
Year of publication
1993
Pages
409 - 415
Database
ISI
SICI code
1063-7826(1993)27:5<409:PEAPOT>2.0.ZU;2-1
Abstract
A comprehensive investigation was made of the photomagnetic effect and of photoconductivity in crossed electric and magnetic fields applied to CdxHg1-xTe/CdTe (x almost-equal-to 0.2) films grown by the method o f liquid-phase epitaxy. Measurements were made at liquid-nitrogen temp erature in magnetic fields up to 1 T. The photoconductivity of thin fi lms in the usual static fields was nonmonotonic. A theoretical model w as developed to provide a satisfactory description of the photomagneti c effect and the photoconductivity of the investigated material. Fitti ng of the theoretical results to the experimental data yielded the rec ombination parameters of the investigated films, such as the surface r ecombination velocity, the bulk lifetime, the diffusion length, and th e built-in electric field due to a composition gradient across the thi ckness. Measurements of the photoconductivity in various longitudinal fields provided information on changes in the recombination and diffus ion parameters across the film thickness.