Am. Yafyasov et al., THE BAND-STRUCTURE PARAMETERS OF SURFACE-LAYERS OF EPITAXIAL-FILMS OFNARROW-GAP SOLID-SOLUTIONS, Semiconductors, 27(5), 1993, pp. 419-422
The results of an experimental study (by the field-effect method in an
electrolyte) of surface layers of narrow-gap ZnxHg1-xTe semiconductor
solid solutions are presented. The dispersion laws, the density-of-st
ates effective masses in the energy bands, and the dependences of the
differential density of the electron states in the conduction band wer
e determined for surface layers of epitaxial ZnxHg1-xTe films (x = 0.1
5, 0.16, 0.17, and 0.20-0.22).