THE BAND-STRUCTURE PARAMETERS OF SURFACE-LAYERS OF EPITAXIAL-FILMS OFNARROW-GAP SOLID-SOLUTIONS

Authors
YAFYASOV AM SAVITSKII VG KOVTUN RN PEREPELKIN AD BOZHEVOLNOV VB
Citation
Am. Yafyasov et al., THE BAND-STRUCTURE PARAMETERS OF SURFACE-LAYERS OF EPITAXIAL-FILMS OFNARROW-GAP SOLID-SOLUTIONS, Semiconductors, 27(5), 1993, pp. 419-422
Citations number
8
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
27
Issue
5
Year of publication
1993
Pages
419 - 422
Database
ISI
SICI code
1063-7826(1993)27:5<419:TBPOSO>2.0.ZU;2-2
Abstract
The results of an experimental study (by the field-effect method in an electrolyte) of surface layers of narrow-gap ZnxHg1-xTe semiconductor solid solutions are presented. The dispersion laws, the density-of-st ates effective masses in the energy bands, and the dependences of the differential density of the electron states in the conduction band wer e determined for surface layers of epitaxial ZnxHg1-xTe films (x = 0.1 5, 0.16, 0.17, and 0.20-0.22).