STATIC CURRENT-VOLTAGE CHARACTERISTICS OF RESONANT TUNNEL-DIODES BASED ON GAAS ALAS HETEROSTRUCTURES/

Authors
IGNATEV AS KAMENEV AV KOPYLOV VB NEMTSEV GZ POSVYANSKII DV
Citation
As. Ignatev et al., STATIC CURRENT-VOLTAGE CHARACTERISTICS OF RESONANT TUNNEL-DIODES BASED ON GAAS ALAS HETEROSTRUCTURES/, Semiconductors, 27(5), 1993, pp. 423-426
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
27
Issue
5
Year of publication
1993
Pages
423 - 426
Database
ISI
SICI code
1063-7826(1993)27:5<423:SCCORT>2.0.ZU;2-2
Abstract
The method of molecular beam epitaxy was used to grow GaAs/AlAs hetero structures and make resonant tunnel diodes from them. The static curre nt-voltage characteristics of these diodes were determined. Difference s were observed between the nature of the current-voltage characterist ics of the diodes made from identical heteroepitaxial structures. An e quivalent circuit of a resonant tunnel diode was proposed. This model was used to calculate the current-voltage characteristics of the diode s operating under various conditions.