SELF-RECOVERY OF IMPLANTED SEMICONDUCTORS

The results of an experimental study of the self-recovery of the struc ture of implanted silicon and cadmium telluride layers are presented. The curves of the intensity of light reflected from the implanted surf ace and of the amorphization dose versus the temperature, the radiatio n intensity, the ion mass, and types of ions (doping impurity or inact ive impurity) have been determined. A phenomenological model which acc ounts for the results has been proposed.