ANNEALING AND MODIFICATION OF RADIATION DEFECTS IN SILICON IMPLANTED WITH HIGH-ENERGY BORON IONS

Authors
ALBAKKUR F DIDYK AY KOZLOV IP ODZHAEV VB PETROV VV PROSOLOVICH VS SOKHATSKII AS YANKOVSKII ON
Citation
F. Albakkur et al., ANNEALING AND MODIFICATION OF RADIATION DEFECTS IN SILICON IMPLANTED WITH HIGH-ENERGY BORON IONS, Semiconductors, 27(5), 1993, pp. 456-457
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
27
Issue
5
Year of publication
1993
Pages
456 - 457
Database
ISI
SICI code
1063-7826(1993)27:5<456:AAMORD>2.0.ZU;2-F