RESONANCES IN THE TEMPERATURE-DEPENDENCE OF THE ELECTRICAL-CONDUCTIVITY OF DOPED SILICON DUE TO EXCITED IMPURITY STATES

Authors
ZHDAN AG LIFSHITS TM RYLKOV VV SHAFRAN AG
Citation
Ag. Zhdan et al., RESONANCES IN THE TEMPERATURE-DEPENDENCE OF THE ELECTRICAL-CONDUCTIVITY OF DOPED SILICON DUE TO EXCITED IMPURITY STATES, Semiconductors, 27(5), 1993, pp. 465-467
Citations number
6
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
27
Issue
5
Year of publication
1993
Pages
465 - 467
Database
ISI
SICI code
1063-7826(1993)27:5<465:RITTOT>2.0.ZU;2-G