PHYSICAL-PROPERTIES AND PHOTOLUMINESCENCE OF POROUS SILICON

Authors
BRESLER MS YASSIEVICH IN
Citation
Ms. Bresler et In. Yassievich, PHYSICAL-PROPERTIES AND PHOTOLUMINESCENCE OF POROUS SILICON, Semiconductors, 27(5), 1993, pp. 475-481
Citations number
20
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
27
Issue
5
Year of publication
1993
Pages
475 - 481
Database
ISI
SICI code
1063-7826(1993)27:5<475:PAPOPS>2.0.ZU;2-N
Abstract
A review of fabrication methods and optical properties of porous silic on is presented. Intense luminescence of porous silicon in the visible spectral range is due to the formation of quantum wires with diameter s of 20-30 angstrom in the process of silicon anodization. Kinetics ex periments on photoluminescence, which reveal a hierarchy of lifetimes in this material, are discussed. Porous silicon is a promising materia l for construction of LEDs compatible with silicon electronics.