A new process for the deposition of thick (= 10-mum) films of silica a
nd titania-doped silica on silicon substrates is described. Films are
built up by repetitive operation of a simple process cycle in which a
layer of sol-gel material is deposited by spin coating, then densified
by rapid thermal annealing. Stress-free layers are obtained through c
areful choice of the anneal temperature. Bilayer structures suitable f
or waveguide fabrication may also be constructed by performing two suc
cessive deposition runs using sol-gel precursors with different titani
a concentrations. These bilayers may be patterned topographically into
ridges by using reactive ion etching, and the ridges may be planarize
d by applying additional layers of sol-gel material to form buried cha
nnel waveguides.