NOVEL SURFACE-EMITTING GAAS ALGAAS LASER-DIODES BASED ON SURFACE-MODEEMISSION/

Citation
A. Kock et al., NOVEL SURFACE-EMITTING GAAS ALGAAS LASER-DIODES BASED ON SURFACE-MODEEMISSION/, Applied physics letters, 63(9), 1993, pp. 1164-1166
Citations number
23
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
63
Issue
9
Year of publication
1993
Pages
1164 - 1166
Database
ISI
SICI code
0003-6951(1993)63:9<1164:NSGALB>2.0.ZU;2-Z
Abstract
We present a novel concept to achieve surface emission from convention al semiconductor laser diodes. This new type of laser diode is modifie d to allow a coupling of the laser mode to a transverse electric polar ized surface mode. As a result we achieve surface emission from GaAs/A lGaAs double heterostructure laser diodes with a beam divergence of 0. 2%. This novel concept has a high potential for the realization of a b eam steering device.