BORON-IMPLANTED 6H-SIC DIODES

Authors
GHEZZO M BROWN DM DOWNEY E KRETCHMER J KOPANSKI JJ
Citation
M. Ghezzo et al., BORON-IMPLANTED 6H-SIC DIODES, Applied physics letters, 63(9), 1993, pp. 1206-1208
Citations number
24
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
9
Year of publication
1993
Pages
1206 - 1208
Database
ISI
SICI code
0003-6951(1993)63:9<1206:B6D>2.0.ZU;2-H
Abstract
Ion implanted planar p-n junctions are important for silicon carbide d iscrete devices and integrated circuits. Conversion to p-type of n-typ e 6H-SiC was observed for the first time using boron implantation. Dio des were fabricated with boron implants at 25 and 1000-degrees-C, foll owed by 1300-degrees-C post-implant annealing in a furnace. The best d iodes measured at 21-degrees-C exhibited an ideality factor of 1.77, r everse bias leakage of 10(-10) A/cm2 at -10 V, and a record high (for a SiC-implanted diode) breakdown voltage of -650 V.