We report the growth of GaSb/AlSb serpentine superlattices (SSLs) on v
icinal GaAs and GaSb substrates. Cross-sectional transmission electron
microscopy confirms the SSL structure and shows excellent lateral uni
formity, better than previous arsenide-SSLs. Photoluminescence (PL) me
asurements indicate a good-quality lateral superlattice with a spectra
l linewidth between 13 and 15 meV. Polarization-dependent PL measureme
nts give a normalized linear polarization around 60%, the strongest th
at has been seen for SSL structures. Preliminary estimates suggest muc
h better segregation between the Ga-rich and Al-rich regions than arse
nide-SSLs, with the change in aluminum concentration DELTAx almost-equ
al-to 0.35.