NEW DEGRADATION MECHANISM ASSOCIATED WITH HYDROGEN IN BIPOLAR-TRANSISTORS UNDER HOT-CARRIER STRESS

Authors
GOPI PK LI GP SONEK GJ DUNKLEY J HANNAMAN D PATTERSON J WILLARD S
Citation
Pk. Gopi et al., NEW DEGRADATION MECHANISM ASSOCIATED WITH HYDROGEN IN BIPOLAR-TRANSISTORS UNDER HOT-CARRIER STRESS, Applied physics letters, 63(9), 1993, pp. 1237-1239
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
9
Year of publication
1993
Pages
1237 - 1239
Database
ISI
SICI code
0003-6951(1993)63:9<1237:NDMAWH>2.0.ZU;2-D
Abstract
Avalanche hot carrier induced bipolar device degradation as a function of temperature, current density, and time is reported. The observed d rift in emitter-base breakdown voltage (V(ebo)) is found to be well co rrelated to changes in forward base (I(b)) and collector (I(c)) curren ts. The model of hydrogen release from the Si-SiO2 interface and its s ubsequent passivation of base dopants during hot carrier stress is pro posed to account for such a correlation.