LOW-TEMPERATURE (313-DEGREES-C) SILICON EPITAXIAL-GROWTH BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION WITH STAINLESS-STEEL MESH

Authors
SHIEH MD LEE CP CHEN CH YEW TR KUNG CY
Citation
Md. Shieh et al., LOW-TEMPERATURE (313-DEGREES-C) SILICON EPITAXIAL-GROWTH BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION WITH STAINLESS-STEEL MESH, Applied physics letters, 63(9), 1993, pp. 1252-1254
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
9
Year of publication
1993
Pages
1252 - 1254
Database
ISI
SICI code
0003-6951(1993)63:9<1252:L(SEBP>2.0.ZU;2-Z
Abstract
This letter presents the low temperature silicon epitaxial growth on p -type, [100] Si wafers by plasma-enhanced chemical vapor deposition wi th a stainless steel mesh. Following a modified ex situ spin-etch clea ning and an in situ H-2 baking step, the epitaxial layer was grown at 313-degrees-C using SiH4 (30 sccm)/H-2 (22 sccm) with a pressure of 61 mTorr and a rf power of 10 W. Epitaxial layers were also grown at 323 -degrees-C with different silane flow rates. The epitaxial film contai ns higher defect density when the silane flow rate is low.