ANISOTROPIC EXCITATION-SPECTRA OF GAAS ALGAAS QUANTUM-WELLS GROWN ON VICINAL PLANE SUBSTRATES/

Authors
WENTINK DJ DAWSON P FOXON CT
Citation
Dj. Wentink et al., ANISOTROPIC EXCITATION-SPECTRA OF GAAS ALGAAS QUANTUM-WELLS GROWN ON VICINAL PLANE SUBSTRATES/, Applied physics letters, 63(9), 1993, pp. 1261-1263
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
9
Year of publication
1993
Pages
1261 - 1263
Database
ISI
SICI code
0003-6951(1993)63:9<1261:AEOGAQ>2.0.ZU;2-W
Abstract
We report measurements of the photoluminescence excitation spectra of a series of GaAs/AlGaAs quantum well samples grown on vicinal plane su bstrates with differing off-cut angles. When the plane of polarization of the exciting light is changed we have observed a clear variation i n the ratio of the strength of the n=1 light and heavy hole exciton tr ansitions in samples grown on vicinal plane substrates. This behavior is attributed to anisotropic scattering at steps in the heterointerfac e.