Mj. Burns et al., DEMONSTRATION OF Y1BA2CU3O7-DELTA AND COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR DEVICE FABRICATION ON THE SAME SAPPHIRE SUBSTRATE, Applied physics letters, 63(9), 1993, pp. 1282-1284
We report the first fabrication of active semiconductor and high-tempe
rature superconducting devices on the same substrate. Test structures
of complementary metal-oxide-semiconductor transistors were fabricated
on the same sapphire substrate as test structures of Y1Ba2Cu3O7-delta
flux-flow transistors, and separately, Y1Ba2Cu3O7-delta superconducti
ng quantum interference devices utilizing both biepitaxial and step-ed
ge Josephson junctions. Both semiconductor and superconductor devices
were operated at 77 K. The cofabrication of devices using these dispar
ate yet complementary electronic technologies on the same substrate op
ens the door for the fabrication of true semiconductive/superconductiv
e hybrid integrated circuits capable of exploiting the best features o
f each of these technologies.