NEAR-SURFACE REGION CHARACTERIZATION BY EXTREMELY ASYMMETRIC BRAGG REFLECTION TOPOGRAPHY

Near-surface regions of Cd1-xMnxTe and Hg1-xCdxTe and Hg1-xCdxTe epila yers (down to tens of angstroms) on (001) GaAs substrates have been ch aracterized by extremely asymmetric Bragg reflection topography (EABRT ) with the laboratory x-ray source condition and a Lang camera, using x-ray grazing incidence angles less than the critical angle for total external reflection. The experimental topographs obtained in the prese nt work illustrate the potential of the EABRT technique for nondestruc tive characterization of near-surface regions of crystals. The resolut ion of an image in EABRT is discussed in detail.