CORRELATION OF THE STRUCTURAL-PROPERTIES WITH THE DEVICE CHARACTERISTICS OF HYDROGENATED AMORPHOUS-SILICON DEPOSITED AT DIFFERENT SUBSTRATETEMPERATURES

The structural properties of hydrogenated amorphous silicon (a-Si:H) h ave a profound effect on the characteristics of the devices based on t his material. The structural properties of the films were varied by de positing the samples at different substrate temperatures and character ized by secondary neutral mass spectroscopy, hydrogen evolution techni que, and photothermal deflection spectroscopy. The results were correl ated with the primary photocurrent data of a-Si:H Schottky barrier dev ices. It was observed that there is an optimum in both the rigidity of network and hydrogen content for the realization of the best film and device properties.