AN ANALYTICAL EXPRESSION FOR PHONON-LIMITED ELECTRON-MOBILITY IN SILICON-INVERSION LAYERS

Authors
GAMIZ F BANQUERI J MELCHOR I CARCELLER JE CARTUJO P LOPEZVILLANUEVA JA
Citation
F. Gamiz et al., AN ANALYTICAL EXPRESSION FOR PHONON-LIMITED ELECTRON-MOBILITY IN SILICON-INVERSION LAYERS, Journal of applied physics, 74(5), 1993, pp. 3289-3292
Citations number
20
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
74
Issue
5
Year of publication
1993
Pages
3289 - 3292
Database
ISI
SICI code
0021-8979(1993)74:5<3289:AAEFPE>2.0.ZU;2-Y
Abstract
A complete Monte Carlo study of phonon-limited electron mobility in (1 00) silicon-inversion layers has been carried out. It has been determi ned advantageous to consider more than three energy subbands for elect ron motion. First-order intervalley scattering has also been shown to play an important role in ohmic transport. The results of the Monte Ca rlo simulation can be fitted by a simple analytical expression that co incides with the phonon-limited mobility for the bulk in the zero tran sverse-electric-field limit.