K. Misiakos et D. Tsamakis, ACCURATE MEASUREMENTS OF THE SILICON INTRINSIC CARRIER DENSITY FROM 78-K TO 340-K, Journal of applied physics, 74(5), 1993, pp. 3293-3297
The intrinsic carrier density in silicon has been measured by a novel
technique based on low-frequency capacitance measurements of a p+-i-n diode biased in high injection. The major advantage of the method is
its insensitivity to uncertainties regarding the exact values of the c
arrier mobilities, the recombination parameters, and the doping densit
y. The intrinsic carrier density was measured in the temperature range
from 78 to 340 K. At 300 K the value of n(i) was found to be (9.7 +/-
0.1) X 10(9) cm-3.