ACCURATE MEASUREMENTS OF THE SILICON INTRINSIC CARRIER DENSITY FROM 78-K TO 340-K

Authors
MISIAKOS K TSAMAKIS D
Citation
K. Misiakos et D. Tsamakis, ACCURATE MEASUREMENTS OF THE SILICON INTRINSIC CARRIER DENSITY FROM 78-K TO 340-K, Journal of applied physics, 74(5), 1993, pp. 3293-3297
Citations number
3
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
74
Issue
5
Year of publication
1993
Pages
3293 - 3297
Database
ISI
SICI code
0021-8979(1993)74:5<3293:AMOTSI>2.0.ZU;2-8
Abstract
The intrinsic carrier density in silicon has been measured by a novel technique based on low-frequency capacitance measurements of a p+-i-n diode biased in high injection. The major advantage of the method is its insensitivity to uncertainties regarding the exact values of the c arrier mobilities, the recombination parameters, and the doping densit y. The intrinsic carrier density was measured in the temperature range from 78 to 340 K. At 300 K the value of n(i) was found to be (9.7 +/- 0.1) X 10(9) cm-3.