COMPARISON OF INTERFACE-TRAP DENSITIES MEASURED BY THE JENQ AND CHARGE-PUMPING TECHNIQUES

The validity of the Jenq technique for measuring the average density o f interface traps D(it) in metal-oxide-semiconductor devices at cryoge nic temperatures (78 K) is assessed. D(it) has been determined using b oth the Jenq technique, which is based on measurement of hysteresis in high-frequency capacitance-voltage data, and the more standard charge pumping technique. Excellent agreement (+/- 10%) is found between the two techniques for a wide range of D(it) values from 5 X 10(10) to 1 X 10(12) traps/cm2 eV.