HIGHLY RESOLVED SEPARATION OF CARRIER-WAVE AND THERMAL-WAVE CONTRIBUTIONS TO PHOTOTHERMAL SIGNALS FROM CR-DOPED SILICON USING RATE-WINDOW INFRARED RADIOMETRY

Authors
MANDELIS A BLEISS R SHIMURA F
Citation
A. Mandelis et al., HIGHLY RESOLVED SEPARATION OF CARRIER-WAVE AND THERMAL-WAVE CONTRIBUTIONS TO PHOTOTHERMAL SIGNALS FROM CR-DOPED SILICON USING RATE-WINDOW INFRARED RADIOMETRY, Journal of applied physics, 74(5), 1993, pp. 3431-3434
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
74
Issue
5
Year of publication
1993
Pages
3431 - 3434
Database
ISI
SICI code
0021-8979(1993)74:5<3431:HRSOCA>2.0.ZU;2-I
Abstract
It is shown that the new photothermal technique of lock-in rate-window infrared radiometry is capable of completely separating out photoexci ted free-carrier-wave and thermal-wave contributions to the phototherm al signal from an n-type, Cr-doped Si wafer with a simple experimental procedure, and with superior temporal resolution in the determination of the electronic lifetime and thermal transport time constant.