EFFECT OF SUPERSATURATION ON THE INTERFACE ABRUPTNESS OF ALGAAS GAAS/ALGAAS QUANTUM-WELL GROWN BY LIQUID-PHASE EPITAXY/

The photoluminescence (PL) spectra of the AlGaAs/GaAs/AlGaAs quantum w ell structures grown by two different liquid phase epitaxy methods are studied. It is found that the supersaturation of the melt used to gro w the top AlGaAs barrier can significantly influence the abruptness of the AlGaAs/GaAs interface. The sample of two-phase method which melt has less supersaturation shows larger PL linewidth and a special high energy shoulder. When temperature increases, the special high energy s houlder gradually shrinks. On the other hand, the sample of large supe rsaturation has narrower PL linewidth and does not have high energy sh oulder. Local quantized states due to the serious interface fluctuacti on are used to explain the PL characteristics of the sample grown by t he two-phase method.