Radial optical emission profiles are determined from Abel inverted emi
ssion spectroscopy of a parallel plate radio frequency system known as
a GEC Reference Cell. These profiles in general show a nonuniform pla
sma, annular in shape. Etching results of silicon wafers also follow t
his annular pattern. This effect is explained by numerically computed
large radial and axial electric fields near the edge of the electrodes
, produced by the presence of the grounded dark shields.