DAMAGE FORMATION IN SI(100) INDUCED BY MEV SELF-ION IMPLANTATION

Damage formation in Si(100) induced by MeV self-ion implantation was s tudied using the Rutherford backscattering and channeling technique. D amage accumulations were found to be produced mainly near the ions' en d of range. Two distinct regions were observed for dose dependence upo n damage. One is for low doses, in which the damage increases slowly w ith dose. The second region is for high-dose implantation, in which th e damage increases rapidly as the dose increases. Beam self-annealing was found in MeV Si ion implanted Si(100). The effects of the energy d epositions on the defect production are also discussed.