ELECTROCHEMICAL FORMATION OF CLOSE-PACKED PHENYL LAYERS ON SI(111)

Citation
Ch. Devilleneuve et al., ELECTROCHEMICAL FORMATION OF CLOSE-PACKED PHENYL LAYERS ON SI(111), JOURNAL OF PHYSICAL CHEMISTRY B, 101(14), 1997, pp. 2415-2420
Citations number
38
Categorie Soggetti
Chemistry Physical
Journal title
JOURNAL OF PHYSICAL CHEMISTRY B
ISSN journal
15206106 → ACNP
Volume
101
Issue
14
Year of publication
1997
Pages
2415 - 2420
Database
ISI
SICI code
1089-5647(1997)101:14<2415:EFOCPL>2.0.ZU;2-S
Abstract
4-NO2 and 4-Br benzenediazonium salts have been electrochemically redu ced on H-terminated Si(111) electrodes. Electrochemical measurements e vidence that the reaction results in a robust modification of Si(111) surfaces. XPS shows that organic films are monolayer thick and that co valent =Si-Ar bonding occurs, with no oxide at the interface. In the c ase of the Br salt, quantitative RES measurements suggest that layers are (2x1) close-packed and assess their stability against several rins ing procedures including exposure to 40% HF. A mechanism of grafting i s discussed.