PREPARATION AND PHOTOELECTROCHEMICAL CHARACTERIZATION OF ZNSIAS2 CRYSTALS

ZnSiAs2 (chalcopyrite structure) single crystals were grown by chemica l vapor transport (CVT). Hall effect and photoelectrochemical techniqu es were used to characterize the properties of the p-type materials. D oping level, mobility, and resistivity were determined and compared wi th literature values for crystals Obtained from other growth technique s; Photocurrent spectroscopy was used to measure the bandgap and trans ition types in the crystals. The interfacial energetics were measured with capacitance techniques (Mott-Schottky). The effect of various wet chemical etchants on the photocurrent voltage curves and quantum yiel ds for carrier collection was also investigated.