KINETICS OF DEFECT CREATION IN HYDROGENATED AMORPHOUS-SILICON BY LIGHT-PULSES

Authors
MEAUDRE R VIGNOLI S MEAUDRE M CHANEL L
Citation
R. Meaudre et al., KINETICS OF DEFECT CREATION IN HYDROGENATED AMORPHOUS-SILICON BY LIGHT-PULSES, Philosophical magazine letters, 68(3), 1993, pp. 159-165
Citations number
15
Categorie Soggetti
Physics, Condensed Matter
Journal title
Philosophical magazine letters → ACNP
ISSN journal
09500839
Volume
68
Issue
3
Year of publication
1993
Pages
159 - 165
Database
ISI
SICI code
0950-0839(1993)68:3<159:KODCIH>2.0.ZU;2-U
Abstract
The Creation Of Metastable defects in hydrogenated amorphorus silicon subjected to laser pulses with laser pulse energy density in the range U = (2.5-33)x 10(-3) J cm-2 has been investigated. After a rise time nearly independent of U, saturation of the defect density N(sat) is ob served, and N(sat) varies linearly with U in the range of energies con sidered. A model including the light-induced annealing of defects fits the present experimental data.