CONFORMATIONS OF POLY(METHYL METHACRYLATE) AND ITS DEGRADED FORMS UPON RADIATION

Citation
Kj. Miller et al., CONFORMATIONS OF POLY(METHYL METHACRYLATE) AND ITS DEGRADED FORMS UPON RADIATION, Macromolecules, 26(18), 1993, pp. 4945-4952
Citations number
29
Categorie Soggetti
Polymer Sciences
Journal title
ISSN journal
00249297
Volume
26
Issue
18
Year of publication
1993
Pages
4945 - 4952
Database
ISI
SICI code
0024-9297(1993)26:18<4945:COPMAI>2.0.ZU;2-X
Abstract
The radiation-induced decomposition of syndiotactic (st) and isotactic (it) poly(methyl methacrylate) (PMMA), containing CH2C(COOCH3)(CH3) u nits, to yield irradiation products (PMMA(d)) resulting from hydrogen abstraction from alpha-methyl or methylene groups to form main chain ( M=) or side chain (S=) double bonds is studied by conformational analy sis. Relative minimum energy conformations of the st- and it-isomers o f PMMA as free molecules are studied. The isomers of PMMA(d) have rela tive minima in an overall linear (L) chain (assumed to be the form ret ained in the solid) as well as a global minimum in a bent (B) form (as sumed to contribute to forms in solution). The impact of the change of a tetrahedral carbon atom to a trigonal carbon atom upon double bond formation on the conformational energy is fundamental to the understan ding of the results. The experimental results are explained by the fol lowing theoretical observations. In reactions involving only overall l inear conformations, side chain double bond formation is favored becau se of the resulting large increase in steric repulsion between polymer units in main chain double bond formation. In reactions proceeding to bent conformations, however, the decreased steric interaction yields both main and side chain double bond formation within 6.3 kcal/mol for the st-PMMA(d) isomer and 2.2 kcal/mol for the it-PMMA(d) isomer. Rea ctions on surfaces are assumed to be constrained to the overall linear conformation of the starting material, PMMA. Prevention of both M= an d S= degradation products is desired for microlithographic application s. Increased solubility arising from main chain scission (MCS) is desi red, and both M= and S= for that reason are undesirable with respect t o resist sensitivity. It is proposed that the troublesome S= process c an be attenuated or eliminated by replacing alpha-CH3 with alpha-CF3, thus enhancing the distribution of products toward MCS.