INFLUENCE OF SINTERING PROFILE ON THE RESISTIVITY OF LOW-CURIE-POINT PTCR CERAMICS

Citation
Yy. Lu et al., INFLUENCE OF SINTERING PROFILE ON THE RESISTIVITY OF LOW-CURIE-POINT PTCR CERAMICS, Materials letters, 17(3-4), 1993, pp. 141-145
Citations number
18
Categorie Soggetti
Material Science","Physics, Applied
Journal title
ISSN journal
0167577X
Volume
17
Issue
3-4
Year of publication
1993
Pages
141 - 145
Database
ISI
SICI code
0167-577X(1993)17:3-4<141:IOSPOT>2.0.ZU;2-P
Abstract
The influence of sintering profile, with emphasis on the effect of soa king treatment and cooling rate, on the resistivity of low-Curie-point positive temperature coefficient of resistivity (PTCR) ceramics has b een investigated. Soaking treatment at 1200-degrees-C or slower coolin g rate were found to result in an increase in the room-temperature and maximum values of resistivity in the resistivity-temperature characte ristics. The surface acceptor density (N(s)), whose value was extracte d from the capacitance-voltage measurement, was found to increase with soaking treatment at 1200-degrees-C or slower cooling rate. From deri vations based on the Heywang-Jonker model, higher room-temperature and maximum resistivities are expected to occur as a result of increasing N(s), as confirmed by the experimental data.