EXCITON SQUEEZED STATE IN OPTICALLY-EXCITED SEMICONDUCTORS

Authors
AN NB HOA TT
Citation
Nb. An et Tt. Hoa, EXCITON SQUEEZED STATE IN OPTICALLY-EXCITED SEMICONDUCTORS, Physics letters. A, 180(1-2), 1993, pp. 145-148
Citations number
22
Categorie Soggetti
Physics
Journal title
Physics letters. A → ACNP
ISSN journal
03759601
Volume
180
Issue
1-2
Year of publication
1993
Pages
145 - 148
Database
ISI
SICI code
0375-9601(1993)180:1-2<145:ESSIOS>2.0.ZU;2-5
Abstract
Current pump-probe techniques allow one to prepare highly excited semi conductors which can be modelled as interacting exciton-photon systems . We theoretically evaluate the exciton quadrature variances for such systems which show that the initially coherent exciton can periodicall y evolve into a squeezed state. Necessary constraints for the squeezin g effect are found and an analysis over the parameter space is given.