Tw. Josefsson et Ae. Smith, MEAN INELASTIC ELECTRON-SCATTERING POTENTIALS FOR SI AND GAAS FROM DIELECTRIC MATRIX CALCULATIONS, Physics letters. A, 180(1-2), 1993, pp. 174-178
A first principles calculation of the inelastic electron mean inner-po
tential is presented for Si and GaAs as a function of incident energy.
This work is based on a dielectric matrix calculation of the frequenc
y and wave-vector dependent loss function determined in the RPA from n
on-local empirical pseudopotential electronic structure. Comparisons a
re made with the generalised oscillator strength models and experiment
.