MEAN INELASTIC ELECTRON-SCATTERING POTENTIALS FOR SI AND GAAS FROM DIELECTRIC MATRIX CALCULATIONS

Authors
JOSEFSSON TW SMITH AE
Citation
Tw. Josefsson et Ae. Smith, MEAN INELASTIC ELECTRON-SCATTERING POTENTIALS FOR SI AND GAAS FROM DIELECTRIC MATRIX CALCULATIONS, Physics letters. A, 180(1-2), 1993, pp. 174-178
Citations number
33
Categorie Soggetti
Physics
Journal title
Physics letters. A → ACNP
ISSN journal
03759601
Volume
180
Issue
1-2
Year of publication
1993
Pages
174 - 178
Database
ISI
SICI code
0375-9601(1993)180:1-2<174:MIEPFS>2.0.ZU;2-L
Abstract
A first principles calculation of the inelastic electron mean inner-po tential is presented for Si and GaAs as a function of incident energy. This work is based on a dielectric matrix calculation of the frequenc y and wave-vector dependent loss function determined in the RPA from n on-local empirical pseudopotential electronic structure. Comparisons a re made with the generalised oscillator strength models and experiment .