RESISTIVITY VARIATIONS IN ION-IMPLANTED SILICON DETECTORS

Authors
RIJKEN HA KLEIN SS LIGTHART WCM DEVOIGT MJA BURGER P
Citation
Ha. Rijken et al., RESISTIVITY VARIATIONS IN ION-IMPLANTED SILICON DETECTORS, IEEE transactions on nuclear science, 40(4), 1993, pp. 349-353
Citations number
8
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
40
Issue
4
Year of publication
1993
Part
1
Pages
349 - 353
Database
ISI
SICI code
0018-9499(1993)40:4<349:RVIISD>2.0.ZU;2-Z
Abstract
Ion implanted silicon detectors which are specially developed for timi ng experiments show timing response variations of a few times 100 ps a s a function of the position of irradiation. These variations are caus ed by resistivity variations of a few times 10%. To quantify these res istivity variations depletion depth studies have been performed for a set of detectors. Best timing results are obtained with a high resisti vity overdepleted detector.