INVESTIGATION OF THE TYPE INVERSION PHENOMENA - RESISTIVITY AND CARRIER MOBILITY IN THE SPACE-CHARGE REGION AND ELECTRICAL NEUTRAL BULK IN NEUTRON-IRRADIATED SILICON P-N JUNCTION DETECTORS()

Authors
ZHENG L EREMIN V STROKAN N VERBITSKAYA E
Citation
L. Zheng et al., INVESTIGATION OF THE TYPE INVERSION PHENOMENA - RESISTIVITY AND CARRIER MOBILITY IN THE SPACE-CHARGE REGION AND ELECTRICAL NEUTRAL BULK IN NEUTRON-IRRADIATED SILICON P-N JUNCTION DETECTORS(), IEEE transactions on nuclear science, 40(4), 1993, pp. 367-375
Citations number
18
Categorie Soggetti
Nuclear Sciences & Tecnology","Engineering, Eletrical & Electronic
Journal title
IEEE transactions on nuclear science → ACNP
ISSN journal
00189499
Volume
40
Issue
4
Year of publication
1993
Part
1
Pages
367 - 375
Database
ISI
SICI code
0018-9499(1993)40:4<367:IOTTIP>2.0.ZU;2-S
Abstract
The changes of effective dopant concentration in the space-charge regi on (SCR) of neutron irradiated silicon detectors have been investigate d near the type inversion point. In addition to the conventional capac itance-voltage(C-V) measurements, transient current technique(TCT) usi ng a laser light excitation which is absorbed within 10 mum of silicon was also applied. The details of transient current response in irradi ated silicon detectors are discussed, which gave the possibility for d etermining the effective dopant concentration in the SCR as well as pr operties in the electrical neutral bulk(ENB) of silicon detectors.