B. Dierickx et al., INTEGRATION OF CMOS-ELECTRONICS AND PARTICLE DETECTOR DIODES IN HIGH-RESISTIVITY SILICON-ON-INSULATOR WAFERS, IEEE transactions on nuclear science, 40(4), 1993, pp. 753-758
A new approach to monolithic pixel detectors, based on SOI wafers with
high resistivity substrate, is being pursued by the CERN RD19 collabo
ration. This paper reports on the used fabrication methods, and on the
results of the electrical evaluation of the SOI - MOSFET devices and
of the detector structures fabricated in the bulk. The leakage current
of the high-resistivity PIN-diodes was kept in the order of 5 to 10 n
A/cm2. The SOI preparation processes considered (SIMOX and ZMR) produc
ed working electronic circuits and appear to be compatible with the fa
brication of detectors of suitable quality.