M. Uehara et M. Tanahashi, CHARACTERIZATION OF INSULATING BOUNDARY-L AYERS OF BL-CAPACITORS, Nippon Seramikkusu Kyokai gakujutsu ronbunshi, 101(8), 1993, pp. 867-870
A microstructure of a barrier-layer capacitor with Bi2O3 diffused SrTi
O3 has been studied by means of SEM, TEM, and XPS. Samples for SEM obs
ervations were prepared by electrolytic etching, which allowed a visua
l characterization of insulating boundary layers. They were O2-diffuse
d layers wider than Bi-diffused layers, which observed as lattice-diso
rder region by TEM. Metal Bi was observed in addition to Bi2O3 by XPS.
Barrier-layer model unique in case of Bi2O3 was investigated for oxyg
en supplyment from Bi. And we revealed it's propriety using standard f
ree energy of metal oxide.