Y. Kawamo et J. Harase, SECONDARY RECRYSTALLIZATION IN FE-3-PERCE NT-SI CONTAINING AIN AS INHIBITOR, Nippon Kinzoku Gakkaishi, 57(4), 1993, pp. 368-376
Fe-3%Si containing AlN, which was cold-rolled with 84.7% reduction and
primarily recrystallized, was heated with the heating rate of 15-degr
ees-C/h in the 85%H-2-N2 (condition A) or in the 5%H-2-N2 atmosphere (
condition B) up to a temperature of 1200-degrees-C and extracted from
925-degrees-C at intervals of 50-degrees-C. The secondarily recrystall
ized grains were observed at 975-degrees-C in condition A, while no se
condarily recrystallized grains were found in condition B at this temp
erature. The secondary recrystallization was completed at 1025-degrees
-C in both conditions. No (101) [010] oriented secondary grains were o
bserved in specimen A extracted at 975-degrees-C. However, the main se
condarily recrystallized texture at 1025-degrees-C was (101) [010] in
both conditions. The scatter from the ideal (101) [010] orientation wa
s smaller and the grain size was larger in B condition compared with c
ondition A at this stage. However, the scatter in condition B was larg
er compared with the one processed from the primarily recrystallized s
pecimen containing both AlN and MnS as inhibitors. These results are d
iscussed from the viewpoint of grain boundary migration characteristic
s of coincidence boundaries and the following conclusion were derived.
(1) In the weaker inhibitor condition, selective migration of other t
han SIGMA9 type boundaries occurs in the lower temperature range and s
elective migration of SIGMA9 type boundaries mainly occurs over a high
er temperature range. (2) In the stronger inhibitor condition, selecti
ve migration of grain boundaries initiates over the higher temperature
range and they are mainly SIGMA9 type boundaries.