HIGH IV PRODUCT LT-GAAS MISFET STRUCTURE

Authors
LIPKA K SPLINGART B KOHN E
Citation
K. Lipka et al., HIGH IV PRODUCT LT-GAAS MISFET STRUCTURE, Electronics Letters, 29(13), 1993, pp. 1170-1172
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
13
Year of publication
1993
Pages
1170 - 1172
Database
ISI
SICI code
0013-5194(1993)29:13<1170:HIPLMS>2.0.ZU;2-F
Abstract
Low temperature (LT) GaAs MISFETs with 680 mA/mm drain current and 28V drain voltage have been fabricated. This represents the highest I-V p roduct of a GaAs FET to date, indicating an RF-power handling capabili ty of 2.1 W/mm. The weak dependence of the breakdown voltage on the do ping-thickness product indicates that further improvements are possibl e.