3-GBIT S 2-LEVEL TO 1.5 GSYMBOL/S 4-LEVEL CONVERTER GAAS IC FOR 2 ELECTRODE SEMICONDUCTOR OPTICAL AMPLIFIER MODULATORS/

Authors
RIISHOJ J NIELSEN TN GLIESE U STUBKJAER KE
Citation
J. Riishoj et al., 3-GBIT S 2-LEVEL TO 1.5 GSYMBOL/S 4-LEVEL CONVERTER GAAS IC FOR 2 ELECTRODE SEMICONDUCTOR OPTICAL AMPLIFIER MODULATORS/, Electronics Letters, 29(13), 1993, pp. 1173-1174
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
13
Year of publication
1993
Pages
1173 - 1174
Database
ISI
SICI code
0013-5194(1993)29:13<1173:3S2T1G>2.0.ZU;2-F
Abstract
A novel design of a 50 OMEGA impedance matched two-to-four level conve rtor GaAs IC for two electrode semiconductor optical amplifier modulat ors is presented. Eye diagrams with good eye openings and 0.33 V spaci ng between adjacent logic levels are demonstrated for bit rates up to 3 Gbit/s.