EFFECTS OF ZN DOPING ON MODULATION BANDWIDTH OF 1.55 MU-M INGAAS INGAASP MULTIQUANTUM-WELL DFB LASERS

Authors
LEALMAN IF HARLOW MJ PERRIN SD
Citation
If. Lealman et al., EFFECTS OF ZN DOPING ON MODULATION BANDWIDTH OF 1.55 MU-M INGAAS INGAASP MULTIQUANTUM-WELL DFB LASERS, Electronics Letters, 29(13), 1993, pp. 1197-1198
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
13
Year of publication
1993
Pages
1197 - 1198
Database
ISI
SICI code
0013-5194(1993)29:13<1197:EOZDOM>2.0.ZU;2-H
Abstract
Experimental results are presented that confirm that Zn doping the act ive region of multiquantum well DFB lasers enhances their modulation b andwidth. This is achieved by reducing both the damping and low freque ncy rolloff associated with carrier transport. A maximum CW bandwidth of 17 GHz at 20-degrees-C is reported.