ANALYSIS OF THRESHOLD CURRENT-DENSITY OF CDZNSE ZNSSE STRAINED WELL LASERS/

Authors
KURAMOTO M CHONG TC KIKUCHI A KISHINO K
Citation
M. Kuramoto et al., ANALYSIS OF THRESHOLD CURRENT-DENSITY OF CDZNSE ZNSSE STRAINED WELL LASERS/, Electronics Letters, 29(14), 1993, pp. 1260-1262
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
29
Issue
14
Year of publication
1993
Pages
1260 - 1262
Database
ISI
SICI code
0013-5194(1993)29:14<1260:AOTCOC>2.0.ZU;2-Z
Abstract
The threshold current density (J(th)) of blue-green CdZnSe/ZnSSe strai ned quantum well lasers is analysed using the laser theory established for III-V semiconductor lasers. Very good agreement between theory an d the reported experimental J(th) values is obtained over a wide tempe rature range from 77 to 273 K. The optimal Cd composition of a CdZnSe single quantum well active layer for obtaining a low J(th) value at ro om temperature is in the range 0.25-0.30.